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The BCR 164T E6327 is a PNP silicon digital transistor manufactured by Infineon Technologies. It integrates bias resistors R1 (4.7 kΩ) and R2 (10 kΩ) within a single SC75 package. Key electrical parameters include a collector-emitter voltage of 50 V, a collector current of 100 mA, and a total power dissipation of 250 mW at a case temperature of 109°C or lower. The device features a DC current gain of 30 minimum at 5 mA and a transition frequency of 160 MHz.
Verify the component status with the manufacturer before procurement. Confirm that the specific ordering suffix matches the required package type. Ensure compliance with RoHS directives and check for any end-of-life notifications. Validate supply chain availability through authorized distributors.
Select this component for designs requiring a PNP digital transistor with integrated biasing. Verify that the 50 V collector-emitter voltage and 100 mA collector current meet the application requirements. Consider the thermal resistance characteristics when determining heat dissipation needs.
This part belongs to the BCR series of digital transistors from Infineon Technologies. These components are designed to replace discrete resistor-transistor combinations, reducing board space and assembly complexity. The BCR 164T variant specifically utilizes the SC75 surface-mount package.
Check for alternative packages such as TSFP-3 or TSLP-3-4 if different form factors are needed. Verify pinout compatibility and electrical specifications against other BCR series models.