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The BCR 166F E6327 is a PNP Silicon Digital Transistor from the Infineon BCR166 series, featuring an integrated bias resistor network with R1 = 4.7 kΩ and R2 = 47 kΩ. It operates in a single configuration within a SOT-23 package. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 100 mA, and a DC current gain (hFE) minimum of 70 at IC = 5 mA. The device supports a junction temperature up to 150 °C and complies with AEC-Q101 automotive qualification standards.
Verify component authenticity through authorized Infineon channels or certified distributors. Confirm the specific ordering suffix matches project requirements. Check for end-of-life status or discontinuation notices prior to finalizing procurement plans. Ensure storage conditions adhere to moisture sensitivity level specifications to prevent package damage during assembly.
Select this component for designs requiring a pre-biased PNP transistor with a 4.7 kΩ base resistor. Verify that the 100 mA collector current rating meets load requirements. Consider the SOT-23 footprint constraints against available PCB space. Evaluate thermal dissipation capabilities relative to the expected ambient operating temperature range.
This part belongs to the BCR166 series of PNP digital transistors manufactured by Infineon Technologies. It shares the same internal architecture as other variants in the series but differs in packaging and specific ordering codes. The series is designed for general-purpose switching and logic interface applications requiring minimal external components.
Direct substitutes within the same family include BCR 166W E6327, which utilizes the SOT-323 package. Cross-vendor replacements require matching the PNP polarity, 50 V VCEO rating, 100 mA IC limit, and the specific 4.7 kΩ / 47 kΩ resistor ratio.