SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BCR 166L3 E6327 is a PNP Silicon Digital Transistor from the BCR166 series, manufactured by Infineon Technologies. It integrates bias resistors R1 (4.7 kΩ) and R2 (47 kΩ) within a single SMD package. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, a collector current (IC) of 100 mA, and a total power dissipation (Ptot) of 250 mW at a case temperature up to 135°C. The device features a DC current gain (hFE) minimum of 70, a transition frequency (fT) of 160 MHz, and operates within a junction temperature range of -65°C to +150°C.
Verify component authenticity through official Infineon channels or authorized distributors. Confirm RoHS compliance status via the manufacturer's documentation. Ensure storage conditions remain within specified limits to prevent degradation. Validate part markings against datasheet specifications prior to assembly.
Select this component for PNP digital switching requirements needing integrated biasing. Compare thermal resistance values against specific PCB layout constraints. Evaluate input resistor ratios for logic level compatibility. Consider alternative packages like SOT-23 if footprint variations are required.
This component belongs to the BCR166 family of PNP silicon digital transistors. Variants such as BCR166F, BCR166T, and BCR166W offer different packaging options including TSFP-3, TSLP-3-4, SC75, and SOT323 while maintaining similar electrical characteristics. The L3 suffix specifically denotes the TSLP-3-4 surface mount package configuration.
Publicly confirmed substitute part numbers are not available in the provided source material.