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The BCR 166T E6327 is a PNP silicon digital transistor from Infineon Technologies, packaged in the SC75 surface-mount format. It integrates internal bias resistors with typical values of R1 = 4.7 kΩ and R2 = 47 kΩ. The device supports a collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. Electrical characteristics include a DC current gain (hFE) of at least 70 at IC = 5 mA and VCE = 5 V, and a transition frequency (fT) of 160 MHz at IC = 10 mA. Total power dissipation is rated at 200 mW for junction temperatures up to 102°C.
Verify component authenticity through official manufacturer channels or authorized distributors. Confirm that the SC75 package variant matches the specific thermal resistance requirements of the target application. Ensure compliance with RoHS directives and check for any end-of-life notifications regarding this specific part number before finalizing procurement plans.
Select the BCR 166T E6327 when a PNP configuration with integrated biasing is required in a compact SC75 footprint. Consider the 200 mW power dissipation limit relative to ambient temperature conditions. Verify that the 50 V breakdown voltage meets the maximum operating voltage of the load circuitry.
This component belongs to the BCR 166 series of PNP digital transistors manufactured by Infineon Technologies. The series includes various package options such as SOT-23, TSFP-3, TSLP-3-4, and SOT323. The 'T' suffix specifically denotes the SC75 package type within this product family.
Compatible substitutes within the same series include BCR 166F, BCR 166L3, and BCR 166W, provided the package form factor is interchangeable. Cross-package replacements require verification of pinout compatibility and thermal performance specifications.