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The BCR 169F E6327 is a PNP Silicon Digital Transistor from Infineon Technologies, featuring an integrated bias resistor (R1 = 4.7 kΩ). It is designed for switching circuits, inverters, interface circuits, and driver applications. The component operates with a collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. Electrical characteristics include a DC current gain (hFE) ranging from 120 to 630 at IC = 5 mA, and a transition frequency (fT) of 200 MHz. The device supports a junction temperature up to 150 °C and is qualified according to AEC-Q101 standards.
Verify the specific suffix 'E6327' against official Infineon documentation to confirm packaging details and availability status. Confirm RoHS compliance and Pb-free package specifications prior to integration. Ensure that the ordering information matches the exact part number variant required for the intended application environment.
Select this component when a PNP digital transistor with a 4.7 kΩ internal bias resistor is required. Verify that the 50 V collector-emitter voltage and 100 mA collector current ratings meet the circuit load requirements. Consider the SOT-23 or SOT-323 package options based on board space constraints and thermal dissipation needs.
The BCR 169 series includes variants such as BCR169S (dual isolated transistors in SOT-363) and BCR169W (single transistor in SOT-323). The BCR 169F specifically denotes the single-transistor configuration within this family, sharing core electrical characteristics like the 4.7 kΩ input resistor and 50 V voltage rating across the series.
Publicly confirmed substitute part numbers are not available in the provided source material. Consult Infineon's official replacement guides or contact technical support for validated alternatives if discontinuation occurs.