BCR 169L3 E6327

Overview

The BCR 169L3 E6327 is a PNP Silicon Digital Transistor manufactured by Infineon Technologies. It integrates a single transistor with a built-in bias resistor of 4.7 kΩ in an SC75 surface-mount package. The device supports a collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. Electrical characteristics include a DC current gain (hFE) ranging from 120 to 630, a transition frequency (fT) of 200 MHz, and a maximum total power dissipation of 250 mW at a case temperature up to 135°C.

Feature Summary

• Integrates a PNP silicon transistor with a fixed internal bias resistor for simplified circuit design.

Applications

• Switching circuits
• Inverter applications
• Interface circuits
• Driver circuits

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm the exact package type and reel specifications. Confirm component availability and lifecycle status directly with authorized distributors or the manufacturer before finalizing procurement plans.

Selection Notes

Select this component when a PNP digital transistor with a 4.7 kΩ input resistor is required. Ensure the application operates within the specified 50 V collector-emitter voltage limit and 100 mA current rating. Verify thermal management requirements against the 250 mW power dissipation capability.

Part Context

This part belongs to the BCR169 family of PNP digital transistors offered by Infineon Technologies. The family includes variants with different packaging options such as SOT-23, TSFP-3, TSLP-3-4, SOT-363, SC75, SC74, and SOT-323, all sharing similar electrical characteristics but differing in physical form factors.

Replacement Considerations

BCR169S, BCR169U, BCR169F, BCR169T, BCR169W, BCR169