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The BCR 169T E6327 is a PNP silicon digital transistor from Infineon Technologies, packaged in the SC75 (TSFP-3) surface-mount format. It integrates a single transistor with an internal bias resistor of 4.7 kΩ. Key electrical parameters include a collector-emitter voltage rating of 50 V and a continuous collector current capacity of 100 mA. The device features a DC current gain ranging from 120 to 630 at 5 mA, with a transition frequency of 200 MHz. Total power dissipation is rated at 250 mW, and it operates within a junction temperature range up to 150°C.
Verify component authenticity through official manufacturer channels or authorized distributors. Confirm the specific ordering suffix matches the required package variant. Ensure compliance with RoHS directives and check for any end-of-life notifications prior to finalizing procurement plans.
Select this component for designs requiring a compact PNP digital switch with integrated biasing. The SC75 package suits space-constrained layouts. Verify that the 100 mA current limit and 50 V voltage rating align with the load requirements. Consider thermal constraints when determining total power dissipation limits.
This part belongs to the BCR 169 series of PNP silicon digital transistors. The series includes variants such as BCR 169S and BCR 169U, which feature dual internally isolated transistors in multichip packages like SOT363. The BCR 169T specifically utilizes the TSFP-3/SC75 package configuration.
Publicly confirmed substitute part numbers are not available in the provided documentation. Evaluate other BCR 169 series members or generic PNP digital transistors with matching 50 V ratings and 4.7 kΩ input resistance if direct substitution is necessary.