BCR 169T E6327

BCR 169T E6327

$0.03
  • Description:TRANS PREBIAS PNP 50V 0.1A SC75
  • Series:-

SKU:3351b8947326 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 50V 0.1A SC75
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Resistors Included:R1 Only
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):4.7 kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:200 MHz
  • Power - Max:250 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-75, SOT-416
  • Supplier Device Package:PG-SC75-3D

Download product information

BCR 169T E6327

Overview

The BCR 169T E6327 is a PNP silicon digital transistor from Infineon Technologies, packaged in the SC75 (TSFP-3) surface-mount format. It integrates a single transistor with an internal bias resistor of 4.7 kΩ. Key electrical parameters include a collector-emitter voltage rating of 50 V and a continuous collector current capacity of 100 mA. The device features a DC current gain ranging from 120 to 630 at 5 mA, with a transition frequency of 200 MHz. Total power dissipation is rated at 250 mW, and it operates within a junction temperature range up to 150°C.

Feature Summary

  • Integrates a PNP transistor with a built-in 4.7 kΩ base bias resistor for simplified circuit design.
  • Provides high-speed switching capabilities with a transition frequency of 200 MHz.
  • Offers robust performance with a collector-emitter breakdown voltage of 50 V.

Applications

  • Switching circuits
  • Inverter applications
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify component authenticity through official manufacturer channels or authorized distributors. Confirm the specific ordering suffix matches the required package variant. Ensure compliance with RoHS directives and check for any end-of-life notifications prior to finalizing procurement plans.

Selection Notes

Select this component for designs requiring a compact PNP digital switch with integrated biasing. The SC75 package suits space-constrained layouts. Verify that the 100 mA current limit and 50 V voltage rating align with the load requirements. Consider thermal constraints when determining total power dissipation limits.

Part Context

This part belongs to the BCR 169 series of PNP silicon digital transistors. The series includes variants such as BCR 169S and BCR 169U, which feature dual internally isolated transistors in multichip packages like SOT363. The BCR 169T specifically utilizes the TSFP-3/SC75 package configuration.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Evaluate other BCR 169 series members or generic PNP digital transistors with matching 50 V ratings and 4.7 kΩ input resistance if direct substitution is necessary.

BCR 169T E6327BCR 169T E6327
$0.03
Buy Now