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The BCR 179F E6327 is a PNP Silicon Digital Transistor manufactured by Infineon Technologies. It integrates a single NPN transistor with a built-in bias resistor (R1 = 10 kΩ) in a compact surface-mount package. The device features a collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. Electrical characteristics include a DC current gain (hFE) ranging from 120 to 630 at IC = 5 mA, and a transition frequency (fT) of 150 MHz. Total power dissipation is rated at 250 mW, with a junction temperature limit of 150 °C.
Verify the specific ordering suffix 'E6327' against official Infineon documentation to confirm packaging details and availability status. Confirm RoHS compliance and lifecycle stage directly with the manufacturer or authorized distributors before procurement.
Select this component for applications requiring a PNP digital transistor with integrated base resistance. Ensure the required collector current does not exceed 100 mA and the operating voltage remains within the 50 V limit. Verify thermal management requirements based on the 250 mW power dissipation rating.
The BCR 179 series includes variants such as BCR179L3 and BCR179T, which share similar electrical characteristics but differ in packaging types like TSFP-3, TSLP-3-4, and SC75. The E6327 suffix typically denotes a specific tape and reel configuration for automated assembly.
Consult official Infineon replacement guides for direct substitutes. Generic equivalents may require verification of pin compatibility, hFE ranges, and thermal resistance values.