BCR 179T E6327

Overview

The BCR 179T E6327 is a PNP silicon digital transistor featuring an integrated bias resistor of 10 kΩ. It operates with a collector-emitter voltage of 50 V and a continuous collector current of 100 mA. The device provides a DC current gain ranging from 120 to 630 and supports a transition frequency of 150 MHz. Total power dissipation is rated at 250 mW, with a junction temperature limit of 150°C. It is housed in the SC75 surface-mount package.

Feature Summary

• Integrates a built-in 10 kΩ bias resistor for simplified circuit design
• Provides high DC current gain suitable for switching applications
• Supports operation up to 150 MHz transition frequency

Applications

• Switching circuits
• Inverter circuits
• Interface circuits
• Driver circuits

Procurement Notes

Verify component authenticity through official Infineon channels or authorized distributors. Confirm datasheet revision and manufacturing date codes against project requirements. Ensure proper handling procedures are followed during storage and assembly to maintain electrical integrity.

Selection Notes

Select this component when a PNP digital transistor with a 10 kΩ internal resistor is required. Verify that the 50 V collector-emitter voltage and 100 mA current ratings meet the specific load conditions. Consider the SC75 package dimensions for PCB layout compatibility.

Part Context

This part belongs to the BCR 179 series of PNP silicon digital transistors manufactured by Infineon Technologies. The 'T' suffix indicates the specific SC75 surface-mount package variant. Other variants in the series include the F and L3 packages, which share identical electrical characteristics but differ in physical form factors.

Replacement Considerations

BCR179F, BCR179L3