BCR 183 B6327

BCR 183 B6327

  • Description:TRANS PREBIAS PNP 50V SOT23
  • Series:-

SKU:d196e7fd1abf Category: Brand:

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Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 50V SOT23
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Resistors Included:R1 and R2
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):10 kOhms
  • Resistor - Emitter Base (R2):10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:200 MHz
  • Power - Max:200 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:PG-SOT23

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BCR 183 B6327

Overview

The BCR 183 B6327 is a PNP Silicon Digital Transistor from Infineon Technologies, housed in an SOT-23-3 package. It integrates two internal bias resistors with typical values of R1 = 10 kΩ and R2 = 10 kΩ. The device supports a collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. Key electrical characteristics include a minimum DC current gain (hFE) of 30 at IC = 5 mA, a transition frequency (fT) of 200 MHz, and a maximum total power dissipation of 200 mW. It operates within a junction temperature range of -65°C to +150°C.

Feature Summary

  • Integrates dual bias resistors for simplified circuit design
  • Optimized for switching, inverter, and driver applications
  • Compliant with AEC-Q101 automotive qualification standards

Applications

  • Switching circuits
  • Inverter circuits
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm the exact package variant and marking code. Confirm RoHS compliance status and check for any active discontinuation notices or end-of-life notifications prior to finalizing procurement plans.

Selection Notes

Select this component when a compact PNP digital transistor solution is required for low-voltage switching tasks. Ensure the 50 V collector-emitter rating and 100 mA current capacity align with the target load requirements. Verify that the integrated resistor values meet the necessary input drive conditions.

Part Context

This part belongs to the BCR183 series of PNP silicon digital transistors manufactured by Infineon Technologies. The series includes variants such as BCR183S, BCR183U, and BCR183W, which offer different packaging options like SOT-363, SC-74, and SOT-323 while maintaining similar electrical performance profiles.

Replacement Considerations

Consult the official datasheet for direct pin-compatible alternatives within the same series. Cross-reference specifications such as VCEO, IC, and hFE when evaluating third-party substitutes to ensure functional equivalence.

BCR 183 B6327BCR 183 B6327

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