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The BCR 183 B6327 is a PNP Silicon Digital Transistor from Infineon Technologies, housed in an SOT-23-3 package. It integrates two internal bias resistors with typical values of R1 = 10 kΩ and R2 = 10 kΩ. The device supports a collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. Key electrical characteristics include a minimum DC current gain (hFE) of 30 at IC = 5 mA, a transition frequency (fT) of 200 MHz, and a maximum total power dissipation of 200 mW. It operates within a junction temperature range of -65°C to +150°C.
Verify the specific ordering suffix against official documentation to confirm the exact package variant and marking code. Confirm RoHS compliance status and check for any active discontinuation notices or end-of-life notifications prior to finalizing procurement plans.
Select this component when a compact PNP digital transistor solution is required for low-voltage switching tasks. Ensure the 50 V collector-emitter rating and 100 mA current capacity align with the target load requirements. Verify that the integrated resistor values meet the necessary input drive conditions.
This part belongs to the BCR183 series of PNP silicon digital transistors manufactured by Infineon Technologies. The series includes variants such as BCR183S, BCR183U, and BCR183W, which offer different packaging options like SOT-363, SC-74, and SOT-323 while maintaining similar electrical performance profiles.
Consult the official datasheet for direct pin-compatible alternatives within the same series. Cross-reference specifications such as VCEO, IC, and hFE when evaluating third-party substitutes to ensure functional equivalence.