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The BCR183F E6327 is a PNP Silicon Digital Transistor from the Infineon BCR183 series, designed for switching and driver circuits. It integrates two internally isolated transistors with matched characteristics within a single multichip package. The device features built-in bias resistors of 10 kΩ each (R1 and R2). Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, a collector current (IC) of 100 mA, and a total power dissipation (Ptot) of 250 mW at a case temperature up to 118°C. It operates within a junction temperature range of -65°C to +150°C and is qualified according to AEC-Q101 standards.
Verify component authenticity through authorized channels. Confirm the specific suffix matches the required package type, as the datasheet lists multiple variants like SOT-363 and SC-74. Ensure compliance with RoHS requirements and check for any end-of-life notifications before finalizing procurement plans.
Select this component when dual isolated PNP digital transistors are required in a compact form factor. Consider the thermal resistance values relative to the expected case temperature to ensure power dissipation limits are not exceeded. Verify that the 50 V voltage rating and 100 mA current capacity meet the specific application demands.
This part belongs to the BCR183 series of PNP silicon digital transistors manufactured by Infineon Technologies. The series offers various package options including SOT-23, SOT-363, SC-74, and SOT-323. The 'F' designation typically indicates a specific package variant or marking code within this family, distinct from other suffixes like 'S' or 'U'.
Check for direct substitutes within the BCR183 series such as BCR183S or BCR183U if pin compatibility allows. Verify equivalent electrical characteristics, specifically VCEO, IC, and internal resistor values, before substituting.