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The BCR 183L3 E6327 is a PNP silicon digital transistor manufactured by Infineon Technologies. It integrates two internally isolated transistors with matched characteristics within a single SC74 package (TSLP-3-4). The device features built-in bias resistors, specifically R1 and R2 both at 10 kΩ, resulting in a resistor ratio of 1. Key electrical ratings include a collector-emitter voltage (VCEO) of 50 V, a collector current (IC) of 100 mA, and a total power dissipation (Ptot) of 250 mW at a case temperature up to 135°C. The transition frequency (fT) is typically 200 MHz.
Verify the specific ordering suffix E6327 corresponds to the reel packaging configuration defined in official documentation. Confirm that the SC74 package variant aligns with PCB footprint requirements. Ensure thermal management strategies account for the specified junction-to-solder point thermal resistance limits during operation.
Select this component when dual isolated PNP digital switching is required in a compact form factor. The SC74 package offers a smaller footprint compared to standard SOT-23 or SOT-363 alternatives. Verify that the 10 kΩ internal bias resistor values meet the input drive requirements of the controlling logic stage.
This part belongs to the BCR183 family of PNP silicon digital transistors from Infineon. The family includes various package options such as SOT-23, TSFP-3, TSLP-3-4, SOT-363, SC75, and SC74. The L3 suffix specifically denotes the SC74 (TSLP-3-4) surface mount package configuration.
BCR 183S E6327
The typical value for both R1 and R2 is 10 kΩ.
The maximum total power dissipation is 250 mW at a case temperature (TS) up to 135°C.
It contains two internally isolated transistors with good matching.