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The Infineon BCR183T is a PNP silicon digital transistor housed in an SC74 package. It features two internally isolated transistors with integrated bias resistors, R1 and R2, both nominally 10 kΩ. The device supports a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. Total power dissipation is rated at 250 mW, with a junction temperature limit of 150 °C. Electrical characteristics include a DC current gain (hFE) minimum of 30 at IC = 5 mA, a transition frequency (fT) typical value of 200 MHz, and a collector-base capacitance of 3 pF.
Verify the specific ordering suffix against official documentation to confirm the exact package type and reel specifications. Confirm that the SC74 package variant aligns with the required footprint and thermal management constraints for the target application design.
Select this component when dual isolated PNP switching functionality is required in a compact form factor. Ensure the 10 kΩ internal resistor values match the logic drive requirements. Verify that the SC74 package dimensions fit the available PCB real estate compared to alternative packages like SOT-23 or SOT-363.
This part belongs to the BCR183 series of PNP silicon digital transistors from Infineon Technologies. The series offers various package options including SOT-23, TSFP-3, TSLP-3-4, SOT-363, SC75, SC74, and SOT-323 to accommodate different board layout needs while maintaining consistent electrical characteristics.
Direct substitutes include other BCR183 variants such as BCR183S (SOT-363), BCR183U (SC75), and BCR183W (SOT-323). Cross-package replacements require verification of pinout compatibility and physical footprint constraints.