BCR 185F E6327

Overview

The Infineon Technologies BCR 185F E6327 is a pre-biased PNP silicon digital transistor designed for surface-mount applications. It features an integrated base resistor network within a compact SOT-363 (TSLP-3) package. Key electrical specifications include a collector-emitter voltage of 50 V, a continuous collector current of 100 mA, and a power dissipation rating of 250 mW. The device operates with a typical input resistance of 4.7 kOhms and offers a DC current gain (hFE) minimum of 100. It supports a transition frequency of 200 MHz and functions reliably across a temperature range from -55°C to +150°C.

Feature Summary

• Integrates a built-in base resistor to simplify circuit design and reduce component count
• Utilizes a compact SOT-363 surface-mount package for space-efficient PCB layouts
• Provides high switching speed with a 200 MHz transition frequency
• Ensures robust performance with a wide operating temperature range up to 150°C

Applications

• General-purpose switching circuits in consumer electronics
• Driver stages for LEDs and small loads
• Logic level translation between microcontrollers and peripheral devices
• Battery management system control interfaces

Procurement Notes

Verify the exact suffix configuration against official Infineon documentation to ensure compatibility with specific board designs. Confirm that the SOT-363 footprint matches the intended PCB layout. Check for end-of-life status or obsolescence notices directly from the manufacturer before finalizing procurement plans. Ensure storage conditions adhere to moisture sensitivity levels specified in the datasheet to maintain device integrity during assembly.

Selection Notes

Select this component when a compact PNP switch with integrated biasing is required. The 50V rating suits low-voltage logic applications. Consider the 100mA current limit for load driving capabilities. The 200MHz frequency response is adequate for standard digital switching but may not suit high-frequency RF applications. Evaluate thermal management requirements given the 250mW power dissipation limit in the small package.

Part Context

This part belongs to Infineon's BCR series of pre-biased bipolar junction transistors. These devices combine NPN or PNP transistors with internal resistors to replace discrete components. The BCR 185F variant specifically targets cost-sensitive, space-constrained designs requiring reliable digital switching. It complements other family members like the BCR 185S by offering different resistance configurations within the same physical form factor.

Replacement Considerations

• BCR 185S E6327

FAQ

What is the function of the internal resistor in the BCR 185F?

The internal resistor is connected between the base and emitter terminals. It provides a defined path for leakage current and simplifies drive circuitry by eliminating the need for an external base resistor.

Is the BCR 185F suitable for high-frequency RF applications?

No, the device has a transition frequency of 200 MHz, which is intended for general-purpose digital switching rather than radio frequency signal processing.