SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BCR 185L3 E6327 is a PNP Silicon Digital Transistor from the BCR185 series, manufactured by Infineon Technologies. It integrates a single transistor with built-in bias resistors (R1 = 10 kΩ, R2 = 47 kΩ) in a TSLP-3-4 surface-mount package. Key electrical ratings include a collector-emitter voltage (VCEO) of 50 V, a collector current (IC) of 100 mA, and a total power dissipation (Ptot) of 250 mW at a case temperature up to 135°C. The device features a DC current gain (hFE) minimum of 70, an input resistor tolerance range of 7–13 kΩ, and a transition frequency (fT) typical value of 200 MHz.
Verify component authenticity through official Infineon channels or authorized distributors. Confirm the specific ordering suffix matches the required packaging configuration. Ensure compliance with RoHS directives as indicated in the product specifications. Review thermal management requirements against the specified junction-to-soldering point resistance values before integration.
Select this component when a compact PNP digital solution with integrated biasing is required. The TSLP-3-4 package offers a small footprint suitable for space-constrained designs. Consider the 50 V voltage rating and 100 mA current capability to ensure adequate headroom for the target application load. Verify that the thermal dissipation characteristics align with the expected operating environment.
This part belongs to the BCR185 family of PNP digital transistors, which includes variants like BCR185F, BCR185S, and BCR185W. These components share similar electrical characteristics but differ in packaging types such as SOT-23, SC74, and SC75. The BCR185L3 specifically utilizes the TSLP-3-4 package, distinguishing it from other family members while maintaining consistent functional performance.
Direct substitutes within the same family include BCR185F, BCR185S, and BCR185W, provided the package type is compatible. Cross-referencing with other manufacturers' PNP digital transistors requires verifying pinout compatibility and ensuring equivalent electrical parameters such as VCEO, IC, and hFE are met.