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Product Detailed Parameters
- Description：TRANS PREBIAS PNP 50V TSFP-3
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- Resistors Included：R1 Only
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：22 kOhms
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：120 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- Frequency - Transition：200 MHz
- Power - Max：250 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SOT-723
- Supplier Device Package：PG-TSFP-3
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Overview
The BCR 189F E6327 is a PNP Silicon Digital Transistor manufactured by Infineon Technologies. It integrates a single transistor with a built-in bias resistor (R1 = 22 kΩ) in a compact surface-mount package. The device features a collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. Electrical characteristics include a DC current gain (hFE) ranging from 120 to 630 at IC = 5 mA, and a transition frequency (fT) of 200 MHz. The component operates within a junction temperature range of -65 °C to +150 °C and dissipates up to 250 mW of power.
Feature Summary
- Integrates a PNP transistor with a fixed internal base bias resistor for simplified circuit design.
- Provides high switching speed with a transition frequency of 200 MHz.
- Offers robust electrical isolation with a collector-base breakdown voltage of 50 V.
Applications
- Switching circuits
- Inverter applications
- Interface circuits
- Driver circuits
Procurement Notes
Verify the specific suffix 'E6327' against official documentation to confirm reel specifications and packaging details. Confirm that the component meets all required environmental standards and RoHS compliance before integration into final assemblies.
Selection Notes
Select this component when a PNP digital transistor with a 22 kΩ input resistor is required. Ensure the application demands a 50 V collector-emitter rating and a maximum continuous current of 100 mA. Verify thermal management requirements align with the specified total power dissipation limits.
Part Context
This part belongs to the BCR series of silicon digital transistors produced by Infineon Technologies. These components are designed to replace discrete resistor-transistor networks, reducing board space and assembly complexity. The BCR 189 variant specifically utilizes a PNP configuration suitable for high-side switching or logic interface tasks.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Consult official Infineon documentation for cross-reference information or equivalent product recommendations.
FAQ
What is the value of the built-in bias resistor?
The typical value of the built-in bias resistor (R1) is 22 kΩ, with a minimum of 15 kΩ and a maximum of 29 kΩ.
What is the maximum collector-emitter saturation voltage?
The maximum collector-emitter saturation voltage (VCEsat) is 0.3 V when measured at IC = 10 mA and IB = 0.5 mA.
What is the transition frequency of the BCR 189F?
The transition frequency (fT) is typically 200 MHz, measured at IC = 10 mA, VCE = 5 V, and f = 100 MHz.
