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The BCR 189T E6327 is a PNP silicon digital transistor manufactured by Infineon Technologies. It integrates a single NPN transistor with a built-in bias resistor (R1 = 22 kΩ) in an SC75 surface-mount package. The device supports a collector-emitter voltage of 50 V and a continuous collector current of 100 mA. Key electrical characteristics include a DC current gain (hFE) ranging from 120 to 630, a transition frequency of 200 MHz, and a total power dissipation of 250 mW at a case temperature up to 109°C.
Verify the specific ordering suffix against official documentation to confirm the exact package variant and reel specifications. Confirm component availability status directly with authorized distributors or the manufacturer, as supply conditions may vary. Ensure compliance with RoHS directives and check for any product discontinuation notices prior to finalizing procurement plans.
Select this component when a PNP digital transistor with a 22 kΩ input resistor is required. Verify that the 100 mA collector current and 50 V breakdown voltage meet the load requirements. Consider the SC75 package dimensions for PCB layout compatibility and ensure the thermal management strategy accommodates the specified power dissipation limits.
This component belongs to the BCR series of silicon digital transistors produced by Infineon Technologies. These devices are designed to replace discrete resistor-transistor networks, reducing board space and assembly costs. The BCR 189T specifically utilizes the SC75 package format, distinguishing it from other variants like the TSLP-3 or TSLP-3-4 packages found in the same family.
BCR189F and BCR189L3 are alternative package variants within the same functional family.