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The Infineon Technologies BCR 191F E6327 is a PNP Silicon Digital Transistor designed for surface mount applications in the SOT-23-3 package. It features an integrated bias resistor network with R1 and R2 both specified at 22 kΩ. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Key electrical characteristics include a minimum DC current gain (hFE) of 50 and a transition frequency (fT) of 200 MHz. Power dissipation is rated at 250 mW, with an operating temperature range spanning from -65°C to +150°C.
Verify component authenticity through authorized distribution channels due to end-of-life status. Confirm package integrity upon receipt as the component utilizes small outline packaging. Ensure storage conditions maintain moisture sensitivity levels per manufacturer guidelines prior to soldering. Cross-reference ordering codes with official Infineon documentation to avoid substitution errors during procurement.
Select this component when a pre-biased PNP transistor is required for logic interfacing or low-power switching tasks. The integrated resistor network reduces external component count compared to discrete solutions. Evaluate thermal management requirements given the 250 mW power dissipation limit in the SOT-23-3 form factor. Consider the 200 MHz transition frequency for high-speed digital signal processing applications.
This part belongs to Infineon's BCR series of digital transistors, which combine bipolar junction transistors with internal bias resistors. The BCR 191F variant specifically addresses PNP configuration needs. It complements other family members like the BCR 141 and BCR 505, offering standardized performance for common logic level shifting and buffering roles in consumer and industrial electronics.