BCR 191F E6327

BCR 191F E6327

$0.03
  • Description:TRANS PREBIAS PNP 50V TSFP-3
  • Series:-

SKU:f9042308a850 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 50V TSFP-3
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Resistors Included:R1 and R2
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):22 kOhms
  • Resistor - Emitter Base (R2):22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:200 MHz
  • Power - Max:250 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-723
  • Supplier Device Package:PG-TSFP-3

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BCR 191F E6327

Overview

The Infineon Technologies BCR 191F E6327 is a PNP Silicon Digital Transistor designed for surface mount applications in the SOT-23-3 package. It features an integrated bias resistor network with R1 and R2 both specified at 22 kΩ. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Key electrical characteristics include a minimum DC current gain (hFE) of 50 and a transition frequency (fT) of 200 MHz. Power dissipation is rated at 250 mW, with an operating temperature range spanning from -65°C to +150°C.

Feature Summary

  • Integrates dual bias resistors (R1=22kΩ, R2=22kΩ) to simplify circuit design
  • Provides high-speed switching capabilities suitable for interface and driver circuits
  • Offers compact surface-mount packaging for efficient board space utilization

Applications

  • Switching circuits
  • Inverter applications
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify component authenticity through authorized distribution channels due to end-of-life status. Confirm package integrity upon receipt as the component utilizes small outline packaging. Ensure storage conditions maintain moisture sensitivity levels per manufacturer guidelines prior to soldering. Cross-reference ordering codes with official Infineon documentation to avoid substitution errors during procurement.

Selection Notes

Select this component when a pre-biased PNP transistor is required for logic interfacing or low-power switching tasks. The integrated resistor network reduces external component count compared to discrete solutions. Evaluate thermal management requirements given the 250 mW power dissipation limit in the SOT-23-3 form factor. Consider the 200 MHz transition frequency for high-speed digital signal processing applications.

Part Context

This part belongs to Infineon's BCR series of digital transistors, which combine bipolar junction transistors with internal bias resistors. The BCR 191F variant specifically addresses PNP configuration needs. It complements other family members like the BCR 141 and BCR 505, offering standardized performance for common logic level shifting and buffering roles in consumer and industrial electronics.

Replacement Considerations

  • BCR 191
  • BCR 191D
  • BCR 191E

BCR 191F E6327BCR 191F E6327
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