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The BCR 191L3 E6327 is a PNP silicon digital transistor from Infineon Technologies, featuring an integrated bias resistor network with R1 and R2 both at 22 kΩ. It operates within a collector-emitter voltage (VCEO) of 50 V and supports a maximum collector current of 100 mA. The device provides a DC current gain (hFE) of at least 50 and a transition frequency (fT) of 200 MHz. Total power dissipation reaches 250 mW at a case temperature up to 135°C. It is housed in the TSLP-3-4 surface-mount package.
Verify component authenticity through official manufacturer channels or authorized distributors. Confirm RoHS compliance status and check for end-of-life notices prior to procurement. Ensure ordering suffixes match specific packaging requirements. Validate datasheet revisions against the manufacturing date code on the component body.
Select this component for PNP logic interface applications requiring built-in base resistance. The 22 kΩ resistor values are optimal for standard TTL and CMOS logic levels. Consider the TSLP-3-4 package dimensions for PCB space constraints. Verify that the 50 V rating meets the system's maximum operating voltage requirements.
This part belongs to the BCR191 series of PNP digital transistors. Variants include BCR191F, BCR191T, and BCR191W, which differ primarily in package types such as SOT-23, SC75, and SOT323. The L3 suffix specifically denotes the TSLP-3-4 package configuration used in this model.
Direct substitutes include other BCR191 variants like BCR191F or BCR191T if package compatibility allows. Cross-reference electrical parameters such as VCEO, IC, and hFE when selecting alternative manufacturers' components.