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The BCR 191T E6327 is a PNP Silicon Digital Transistor manufactured by Infineon Technologies. It integrates a single transistor with built-in bias resistors (R1 = 22 kΩ, R2 = 22 kΩ) in a compact SC75 package. The device features a collector-emitter voltage of 50 V and a continuous collector current of 100 mA. Key electrical characteristics include a DC current gain (hFE) of at least 50, a transition frequency (fT) of 200 MHz, and a maximum total power dissipation of 250 mW. The component operates within a junction temperature range of -65 °C to +150 °C.
Verify the specific ordering suffix 'E6327' against official Infineon documentation to confirm packaging details and availability status. Confirm RoHS compliance requirements for the target application. Ensure the SC75 package footprint matches the PCB layout specifications before finalizing procurement orders.
Select this component when a PNP digital transistor with integrated biasing is required for space-constrained designs. Verify that the 100 mA collector current and 50 V breakdown voltage meet the load requirements. Consider the SC75 package dimensions during the mechanical design phase to ensure proper board clearance and assembly compatibility.
This part belongs to the BCR 191 series of PNP silicon digital transistors from Infineon Technologies. The series includes variants such as BCR191F, BCR191L3, and BCR191W, which differ primarily in their physical packages (TSFP-3, TSLP-3-4, SOT323) while maintaining similar electrical characteristics. The 'T' suffix specifically denotes the SC75 package configuration.
Direct substitutes within the same family include BCR191F, BCR191L3, and BCR191W. These alternatives offer identical electrical performance but utilize different package types (TSFP-3, TSLP-3-4, SOT323). Verify pinout compatibility and thermal resistance differences before substituting.