BCR 191T E6327

BCR 191T E6327

$0.03
  • Description:TRANS PREBIAS PNP 50V 0.1A SC75
  • Series:-

SKU:a6652f342c41 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 50V 0.1A SC75
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Resistors Included:R1 and R2
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):22 kOhms
  • Resistor - Emitter Base (R2):22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:200 MHz
  • Power - Max:250 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-75, SOT-416
  • Supplier Device Package:PG-SC75-3D

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BCR 191T E6327

Overview

The BCR 191T E6327 is a PNP Silicon Digital Transistor manufactured by Infineon Technologies. It integrates a single transistor with built-in bias resistors (R1 = 22 kΩ, R2 = 22 kΩ) in a compact SC75 package. The device features a collector-emitter voltage of 50 V and a continuous collector current of 100 mA. Key electrical characteristics include a DC current gain (hFE) of at least 50, a transition frequency (fT) of 200 MHz, and a maximum total power dissipation of 250 mW. The component operates within a junction temperature range of -65 °C to +150 °C.

Feature Summary

  • Integrated bias resistor network simplifies circuit design by eliminating external components.
  • High-speed switching capability supported by a 200 MHz transition frequency.
  • Robust thermal performance with a maximum junction temperature of 150 °C.

Applications

  • Switching circuits
  • Inverter applications
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify the specific ordering suffix 'E6327' against official Infineon documentation to confirm packaging details and availability status. Confirm RoHS compliance requirements for the target application. Ensure the SC75 package footprint matches the PCB layout specifications before finalizing procurement orders.

Selection Notes

Select this component when a PNP digital transistor with integrated biasing is required for space-constrained designs. Verify that the 100 mA collector current and 50 V breakdown voltage meet the load requirements. Consider the SC75 package dimensions during the mechanical design phase to ensure proper board clearance and assembly compatibility.

Part Context

This part belongs to the BCR 191 series of PNP silicon digital transistors from Infineon Technologies. The series includes variants such as BCR191F, BCR191L3, and BCR191W, which differ primarily in their physical packages (TSFP-3, TSLP-3-4, SOT323) while maintaining similar electrical characteristics. The 'T' suffix specifically denotes the SC75 package configuration.

Replacement Considerations

Direct substitutes within the same family include BCR191F, BCR191L3, and BCR191W. These alternatives offer identical electrical performance but utilize different package types (TSFP-3, TSLP-3-4, SOT323). Verify pinout compatibility and thermal resistance differences before substituting.

BCR 191T E6327BCR 191T E6327
$0.03
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