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The BCR 192 B6327 is a PNP Silicon Digital Transistor from Infineon Technologies, featuring built-in bias resistors R1 (22 kΩ) and R2 (47 kΩ). It operates with a collector-emitter voltage of 50 V and a continuous collector current of 100 mA. The device provides a minimum DC current gain (hFE) of 70 at IC = 5 mA and VCE = 5 V. It is available in SOT-23 and SOT-323 packages, with a maximum junction temperature of 150 °C and total power dissipation up to 250 mW for the W variant.
Verify component authenticity through authorized distributors or official Infineon channels. Confirm RoHS compliance and package type (SOT-23 or SOT-323) against specific project requirements. Ensure storage conditions remain within specified limits to maintain device integrity prior to assembly.
Select this component when a PNP digital transistor with integrated biasing is required for compact designs. Consider the SOT-23 or SOT-323 package based on board space constraints. Verify that the 50 V collector-emitter voltage and 100 mA current ratings align with the target application's electrical demands.
This part belongs to the BCR192 series of PNP silicon digital transistors manufactured by Infineon Technologies. The series is designed for high-frequency switching and interface applications, offering a compact solution with integrated bias resistors to reduce component count and PCB area.
Direct substitutes include other PNP digital transistors with similar bias resistor values (R1=22kΩ, R2=47kΩ) and matching voltage/current ratings. Verify pinout compatibility and thermal characteristics before substitution.
The internal bias resistors are R1 = 22 kΩ and R2 = 47 kΩ.
Yes, the BCR 192 is qualified according to the AEC-Q101 standard.
The maximum junction temperature (Tj) is 150 °C.