SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BCR 192F E6327 is a PNP Silicon Digital Transistor from Infineon Technologies, featuring an integrated bias resistor network with R1 at 22 kΩ and R2 at 47 kΩ. It operates within a collector-emitter voltage (VCEO) of 50 V and supports a continuous collector current of 100 mA. The device is qualified to AEC-Q101 standards for automotive applications. Electrical characteristics include a DC current gain (hFE) minimum of 70, a transition frequency (fT) of 200 MHz, and a maximum total power dissipation of 200 mW in the SOT-23 package. It functions across a junction temperature range up to 150°C.
Verify component authenticity through authorized distribution channels. Confirm that the specific ordering suffix matches the required package type, as variations exist between standard and wide packages. Ensure compliance with RoHS directives regarding lead-free materials before integration into final assemblies.
Select this component for applications requiring high-speed digital switching with minimal external components. Consider the thermal resistance limits when designing heat dissipation strategies. Verify that the input voltage requirements align with the specified forward and reverse voltage ratings to prevent damage during operation.
This part belongs to the BCR192 series of PNP digital transistors manufactured by Infineon Technologies. The series includes variants such as the BCR192 and BCR192W, which differ primarily in package dimensions and thermal characteristics while maintaining identical electrical performance specifications.
BCR192E6327HTSA1
The device contains built-in bias resistors with R1 equal to 22 kΩ and R2 equal to 47 kΩ.
Yes, the BCR 192F E6327 is qualified according to the AEC-Q101 standard.
The maximum continuous collector current (IC) is rated at 100 mA.