BCR 196T E6327

Overview

The BCR 196T E6327 is a PNP silicon digital transistor from Infineon Technologies, featuring an integrated bias resistor network with R1 at 47 kΩ and R2 at 22 kΩ. It operates within a collector-emitter voltage (VCEO) of 50 V and supports a continuous collector current of 70 mA. The device is housed in the SC75 surface-mount package and maintains a junction temperature rating up to 150°C. Electrical characteristics include a DC current gain (hFE) minimum of 50 and a transition frequency (fT) of 150 MHz.

Feature Summary

• Integrated dual-bias resistor configuration for simplified circuit design
• High-speed switching capability with defined transition frequency
• Robust thermal performance suitable for compact surface-mount applications

Applications

• Switching circuits
• Inverter logic stages
• Interface driver circuits

Procurement Notes

Verify component authenticity through official Infineon channels or authorized distributors. Confirm the specific SC75 package marking and date code alignment with production records. Ensure storage conditions remain within specified limits to prevent degradation prior to assembly.

Selection Notes

Select this component when a PNP digital switch with high input impedance is required. The fixed 47kΩ/22kΩ resistor ratio suits applications needing moderate drive strength. Verify that the 70mA collector current limit meets load requirements before implementation.

Part Context

This part belongs to the BCR196 series of PNP digital transistors. Variants such as BCR196F, L3, and W share similar electrical parameters but differ in thermal resistance and maximum power dissipation ratings based on their respective packages.

Replacement Considerations

Direct substitutes include other BCR196 variants like BCR196F or BCR196W if package compatibility allows. Cross-reference thermal resistance values carefully when replacing between different package types.