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The BCR 198F E6327 is a PNP Silicon Digital Transistor from Infineon Technologies, featuring an integrated bias resistor network with R1 and R2 both at 47 kΩ. It provides a DC current gain (hFE) of 70 minimum and operates with a collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. The device is qualified to AEC-Q101 standards for automotive applications and supports a junction temperature up to 150°C.
Verify the specific suffix 'E6327' against official documentation to confirm packaging details such as reel size or tape-and-reel specifications. Confirm RoHS compliance status and check for any product discontinuation notices prior to finalizing procurement plans.
Select this component when a PNP digital transistor with high input resistance is required. Ensure the application voltage does not exceed 50 V and the load current remains within the 100 mA limit. Consider thermal dissipation requirements if operating near maximum power limits.
This part belongs to the BCR198 series, which includes variants like BCR198S (dual isolated transistors in SOT-363) and BCR198W (single transistor in SOT-323). The standard BCR198 variant utilizes the SOT-23 package. All variants share similar electrical characteristics but differ in pinout and physical configuration.
Direct substitutes include other BCR198 series parts such as BCR198S or BCR198W, provided the package type matches the PCB layout. Verify pin compatibility carefully as SOT-23, SOT-323, and SOT-363 packages have different pin assignments.