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The BCR 198T E6327 is a PNP silicon digital transistor from Infineon Technologies, housed in an SC75 surface-mount package. It integrates two resistors with a nominal value of 47 kΩ each (R1 and R2). Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 70 mA, and a total power dissipation (Ptot) of 250 mW at a case temperature of 109°C or lower. The device features a DC current gain (hFE) of at least 70, a transition frequency (fT) of 190 MHz, and operates within a junction temperature range of -65°C to +150°C.
Verify the specific ordering suffix against official Infineon documentation to confirm the exact package type and tape-and-reel specifications. Confirm RoHS compliance status through the manufacturer's latest product data sheet before finalizing procurement plans.
Select this component when a PNP digital transistor with integrated bias resistors is required for high-speed switching. Ensure the SC75 package dimensions fit the PCB layout constraints. Verify that the 70 mA collector current rating meets the load requirements of the target application.
This part belongs to the BCR198 family of PNP silicon digital transistors. Variants such as BCR198S offer dual internally isolated transistors in a single package, while others like BCR198F utilize different packages. All variants share similar electrical characteristics but differ in physical packaging and thermal resistance properties.
Check for direct substitutes within the BCR198 series, such as BCR198F or BCR198L3, ensuring package compatibility. Cross-reference with other manufacturers' PNP digital transistors having comparable VCEO, IC, and resistor values if pin-out compatible.
The integrated bias resistors R1 and R2 have a typical value of 47 kΩ.
The maximum continuous collector current (IC) is 70 mA.
The BCR 198T uses the SC75 surface-mount package.