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The BCR 199L3 E6327 is a PNP silicon digital transistor featuring an integrated bias resistor of 47 kΩ. It operates with a collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 70 mA. The device provides a DC current gain (hFE) ranging from 120 to 630 at IC = 5 mA. Electrical characteristics include a transition frequency (fT) of 200 MHz, a collector-base cutoff current (ICBO) maximum of 100 nA, and a total power dissipation (Ptot) of 250 mW for the L3 package variant. Thermal resistance from junction to soldering point is specified at ≤ 60 K/W.
Verify component authenticity through official Infineon channels or authorized distributors. Confirm RoHS compliance status via the manufacturer's product documentation. Ensure storage conditions remain within -65°C to 150°C to maintain device integrity. Check for end-of-life notifications as discontinuation may affect long-term supply availability.
Select this component when a PNP digital transistor with a 47 kΩ internal resistor is required. Verify that the 50 V collector-emitter voltage rating meets the circuit's maximum operating voltage. Ensure the 70 mA collector current capability aligns with load requirements. Consider the TSLP-3-4 package dimensions for PCB layout compatibility.
This part belongs to the BCR199 series of PNP silicon digital transistors manufactured by Infineon Technologies. The series includes variants such as BCR199F and BCR199T, which differ primarily in packaging types like TSFP-3 and SC75. All variants share identical electrical characteristics but vary in thermal resistance and physical footprint specifications.
Publicly confirmed substitute part numbers are not available in the provided datasheet. Consult Infineon technical support for equivalent recommendations based on specific application constraints.