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The BCR 199T E6327 is a PNP silicon digital transistor featuring an integrated bias resistor of 47 kΩ. It operates with a collector-emitter voltage of 50 V and a continuous collector current of 70 mA. The device provides a DC current gain ranging from 120 to 630 and supports a transition frequency of 200 MHz. Total power dissipation is rated at 250 mW, with a junction temperature limit of 150°C. It is housed in the SC75 surface-mount package.
Verify component authenticity through official Infineon channels or authorized distributors. Confirm the specific SC75 package marking and date code align with production records. Request the latest datasheet revision to ensure compliance with current electrical specifications before finalizing procurement orders.
Select this component for PNP digital switching requirements where a 47 kΩ internal resistance is optimal. Ensure the application current remains below the 70 mA limit and verify thermal management capabilities for the SC75 package. Compare against other BCR199 variants if different packaging or resistance values are required.
This part belongs to the BCR199 family of PNP digital transistors manufactured by Infineon Technologies. It shares core electrical characteristics with the BCR199F and BCR199L3 models but utilizes the SC75 surface-mount package. The 'E6327' suffix denotes the specific tape-and-reel packaging configuration.
Direct substitutes within the same family include BCR199F and BCR199L3. Verify pin compatibility and package dimensions when swapping between TSFP-3, TSLP-3-4, and SC75 formats to ensure mechanical fit on the printed circuit board.