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The BCR 512 is an NPN silicon digital transistor from Infineon Technologies, housed in a SOT-23 package. It integrates built-in bias resistors with typical values of R1 = 4.7 kΩ and R2 = 4.7 kΩ, yielding a resistor ratio of 1. The device supports a collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 500 mA. Electrical characteristics include a DC current gain (hFE) of at least 60 at IC = 50 mA, a transition frequency (fT) of 100 MHz, and a total power dissipation of 330 mW. It operates within a junction temperature range up to 150 °C and meets AEC-Q101 qualification standards.
Verify component authenticity through authorized distribution channels. Confirm the specific ordering suffix matches the required tape and reel configuration. Ensure compliance with RoHS directives and check for any regional supply restrictions or end-of-life notifications prior to finalizing procurement plans.
Select this component when a single NPN digital transistor with integrated biasing is required. The 4.7 kΩ internal resistors suit moderate drive currents. Verify that the 500 mA collector current and 50 V voltage ratings exceed the maximum load requirements. Consider the SOT-23 footprint constraints during PCB layout.
This part belongs to the BCR series of NPN silicon digital transistors manufactured by Infineon Technologies. These components are designed to replace discrete resistor-transistor combinations, reducing board space and assembly costs. The BCR 512 specifically features equal base and emitter resistors for balanced switching performance.
Direct substitutes may include other NPN digital transistors with similar 4.7 kΩ bias resistors and SOT-23 packaging. Verify pinout compatibility and electrical parameters such as VCEO and IC before substitution.