BCR 519 E6327

Overview

The BCR 519 E6327 is an NPN silicon digital transistor from Infineon Technologies, packaged in a surface-mount SOT-23 configuration. It integrates a single internal bias resistor with a typical value of 4.7 kΩ. The device supports a collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 500 mA. Electrical characteristics include a DC current gain (hFE) ranging from 120 to 630 at 50 mA, a transition frequency (fT) of 100 MHz, and a total power dissipation of 330 mW at case temperatures up to 79 °C.

Feature Summary

• Integrates a built-in bias resistor to simplify circuit design
• Designed for switching, inverter, and driver applications

Applications

• Switching circuits
• Inverter circuits
• Driver circuits

Procurement Notes

Verify the component status before procurement as this part may be subject to discontinuation or obsolescence. Confirm that the specific ordering suffix matches the required packaging format. Ensure all technical specifications align with the target application requirements prior to finalizing orders.

Selection Notes

Select this component when a compact NPN digital solution with integrated biasing is required. Consider the 4.7 kΩ input resistance and 500 mA current capability against load demands. Verify thermal management needs given the 330 mW power dissipation limit in the SOT-23 package.

Part Context

This component belongs to the BCR series of NPN silicon digital transistors manufactured by Infineon Technologies. These devices are designed to replace multiple discrete components by integrating the transistor and bias resistors into a single package, reducing board space and assembly complexity.

Replacement Considerations

Consult official replacement lists for discontinued parts. Verify pinout compatibility and electrical parameters such as VCEO, IC, and R1 values before substituting.