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The Infineon BCR 569 E6327 is a PNP silicon digital transistor housed in an SOT-23 package. It integrates a built-in bias resistor (R1) with a typical value of 4.7 kΩ and a maximum of 6.2 kΩ. The device supports a collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 500 mA. Key electrical characteristics include a DC current gain (hFE) ranging from 63 to 320 at IC = 50 mA, and a transition frequency (fT) of 150 MHz. Operating temperatures span from -65°C to +150°C, with total power dissipation rated at 330 mW.
Verify the component authenticity by checking the marking code XLs against the official datasheet specifications. Confirm the package type is SOT-23 and the pin configuration matches Base-Emitter-Collector. Ensure the ordering suffix E6327 corresponds to the required tape and reel packaging format before finalizing procurement orders.
Select this component when a PNP digital transistor with a 4.7 kΩ base resistor is required. It is suitable for applications needing a 50 V collector-emitter voltage rating and up to 500 mA continuous current. Consider the thermal resistance of 215 K/W for heat dissipation planning in compact SMD layouts.
This part belongs to the BCR series of digital transistors manufactured by Infineon Technologies. These components combine bipolar junction transistors with internal resistors to reduce board space and assembly complexity. The BCR 569 specifically utilizes a PNP configuration within the standard SOT-23 footprint common to this product family.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing designs by matching the SOT-23 package, PNP polarity, 50 V VCEO rating, and integrated 4.7 kΩ input resistor specifications.