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The BCR108E6327HTSA1 is an NPN silicon digital transistor from the Infineon BCR108 series, housed in a SOT-23 surface-mount package. It integrates a single transistor with built-in bias resistors (R1=2.2 kΩ, R2=47 kΩ). Key electrical parameters include a collector-emitter voltage of 50 V, a collector current of 100 mA, and a total power dissipation of 200 mW at case temperatures up to 102°C. The device features a DC current gain of 70 minimum, a transition frequency of 170 MHz typical, and operates within a junction temperature range of -65°C to 150°C.
Verify the specific ordering suffix E6327HTSA1 against official Infineon documentation to confirm the standard SOT-23 packaging and reel quantity specifications. Ensure that the component meets the required AEC-Q101 qualification status if intended for automotive-grade deployments. Cross-reference the manufacturer part number with authorized distributors to validate authenticity and traceability before procurement.
Select this component when a compact NPN digital switch with integrated base drive is required. The fixed resistor ratio simplifies logic interface designs compared to discrete transistor setups. Consider the thermal resistance characteristics and maximum power dissipation limits relative to the expected ambient operating conditions and duty cycle requirements of the target application.
This component belongs to the BCR108 series of NPN silicon digital transistors manufactured by Infineon Technologies. The series includes variants such as BCR108S and BCR108W, which offer different pin configurations and package types like SOT-363 and SOT-323. The BCR108E6327HTSA1 specifically denotes the single-transistor configuration in the SOT-23 package format.
Publicly confirmed substitute part numbers are not available in the provided source material.