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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V SOT23
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：2.2 kOhms
- Resistor - Emitter Base (R2)：47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- Frequency - Transition：170 MHz
- Power - Max：200 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：PG-SOT23
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Overview
The BCR108E6433HTMA1 is an NPN silicon digital transistor from the Infineon BCR108 series, housed in a SOT-23 surface-mount package. It integrates internal bias resistors with typical values of R1 = 2.2 kΩ and R2 = 47 kΩ. Key electrical parameters include a collector-emitter breakdown voltage (V(BR)CEO) of 50 V, a maximum collector current (IC) of 100 mA, and a DC current gain (hFE) minimum of 70 at IC = 5 mA. The device features a transition frequency (fT) of 170 MHz and operates within a junction temperature range of -65°C to +150°C.
Feature Summary
- Integrates built-in bias resistors for simplified circuit design
- Qualified according to AEC-Q101 automotive standards
- Pb-free RoHS compliant packaging
Applications
- Switching circuits
- Inverter applications
- Interface circuits
- Driver circuits
Procurement Notes
Verify component authenticity through authorized distribution channels or direct manufacturer engagement. Confirm that the specific ordering suffix matches the required package type and compliance specifications. Ensure all technical requirements align with the official datasheet before finalizing procurement orders.
Selection Notes
Select this component when a single NPN digital transistor with integrated biasing is required. The 2.2 kΩ input resistor value suits standard logic interface applications. Verify thermal dissipation limits against the operating ambient temperature to ensure reliable performance within the specified junction temperature range.
Part Context
This part belongs to the BCR108 series, which includes variants like the BCR108S (dual transistors in SOT-363) and BCR108W (single transistor in SOT-323). All share similar electrical characteristics but differ in physical package dimensions and pin configurations as defined by the respective JEDEC standards.
Replacement Considerations
Direct substitutes must match the NPN polarity, 50V VCEO rating, 100mA IC limit, and SOT-23 package. Verify internal resistor values (approx. 2.2k/47k) and hFE minimums to ensure functional equivalence in existing designs.
FAQ
What are the typical values for the internal bias resistors?
The typical internal bias resistor values are R1 = 2.2 kΩ and R2 = 47 kΩ.
Is this component qualified for automotive applications?
Yes, the BCR108 series is qualified according to the AEC-Q101 standard.
What is the maximum collector-emitter breakdown voltage?
The collector-emitter breakdown voltage (V(BR)CEO) is rated at 50 V.
