BCR108WE6327BTSA1

Overview

The Infineon BCR108WE6327BTSA1 is an NPN silicon digital transistor housed in a SOT-323 surface-mount package. It integrates a single NPN bipolar junction transistor with two internal bias resistors: R1 at 2.2 kΩ and R2 at 47 kΩ, yielding a resistor ratio of 0.047. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. Total power dissipation reaches 250 mW at a case temperature up to 124°C. Electrical characteristics include a DC current gain (hFE) minimum of 70 at IC = 5 mA, a transition frequency (fT) typical value of 170 MHz, and a collector-base capacitance of 2 pF. The component operates within a junction temperature range of -65°C to +150°C.

Feature Summary

• Integrates an NPN transistor with built-in bias resistors for simplified circuit design
• Provides high-speed switching capabilities with a typical transition frequency of 170 MHz
• Features low saturation voltage and high DC current gain for efficient signal inversion
• Qualified according to AEC-Q101 standards for automotive reliability

Applications

• Switching circuits
• Inverter applications
• Interface circuits
• Driver circuits

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm the exact package type and tape-and-reel specifications. Confirm RoHS compliance status and ensure the component meets AEC-Q101 requirements if intended for automotive environments. Cross-reference the manufacturer part number with authorized distributors to validate authenticity and traceability before procurement.

Selection Notes

Select this component when a compact NPN digital switch with integrated biasing is required. The SOT-323 package suits space-constrained designs. Ensure the application voltage remains below the 50 V collector-emitter limit and current stays within the 100 mA rating. Consider the thermal resistance characteristics if operating near the maximum junction temperature limits.

Part Context

This part belongs to the BCR108 series of NPN silicon digital transistors from Infineon Technologies. The series includes variants such as BCR108 in SOT-23 and BCR108S in SOT-363 packages. The 'W' designation typically indicates the SOT-323 package variant within this product family.

Replacement Considerations

Direct substitutes within the same series include BCR108 (SOT-23) and BCR108S (SOT-363), provided the pinout and package dimensions are compatible with the existing footprint. Verify electrical parameters match the design requirements when considering alternative manufacturers.

FAQ

What are the values of the internal bias resistors?

The internal bias resistors are R1 = 2.2 kΩ and R2 = 47 kΩ.

What is the maximum collector-emitter voltage?

The maximum collector-emitter voltage (VCEO) is 50 V.

Is this component qualified for automotive applications?

Yes, the BCR108 series is qualified according to the AEC-Q101 standard.