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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V SOT323
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Bulk
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：2.2 kOhms
- Resistor - Emitter Base (R2)：47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- Frequency - Transition：170 MHz
- Power - Max：250 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Supplier Device Package：PG-SOT323
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Overview
The BCR108WH6327XTSA1 is an NPN silicon digital transistor from Infineon Technologies, housed in a SOT-323 surface-mount package. It integrates a single NPN bipolar junction transistor with two internal bias resistors: R1 at 2.2 kΩ and R2 at 47 kΩ. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. Total power dissipation reaches 250 mW at a case temperature up to 124°C, with a junction temperature limit of 150°C. It features a typical transition frequency (fT) of 170 MHz and complies with the AEC-Q101 automotive qualification standard.
Feature Summary
- Integrates an NPN transistor with built-in bias resistors for simplified circuit design
- Features high-speed switching capability with a typical transition frequency of 170 MHz
- Qualified according to AEC-Q101 standards for automotive applications
- Utilizes a compact SOT-323 surface-mount package
Applications
- Switching circuits
- Inverter circuits
- Interface circuits
- Driver circuits
Procurement Notes
Verify the specific suffix WH6327XTSA1 against official Infineon documentation to confirm the exact packaging configuration and reel specifications. Ensure that the component meets all required environmental compliance standards, such as RoHS, before finalizing procurement orders for production integration.
Selection Notes
Select this component when a compact NPN digital transistor with integrated biasing is required for space-constrained designs. Consider the 50 V collector-emitter voltage rating and 100 mA current capacity to ensure adequate headroom for the intended load. Verify thermal management requirements based on the 250 mW power dissipation limit at the specified operating case temperature.
Part Context
This part belongs to the BCR108 series of NPN silicon digital transistors manufactured by Infineon Technologies. The series includes variants with different pin configurations and packages, such as the BCR108S in SOT-363 and the standard BCR108 in SOT-23. All variants share similar electrical characteristics but differ in physical footprint and internal transistor isolation.
Replacement Considerations
Direct replacements within the same family include BCR108SH6327XTSA1 (SOT-363 package) and BCR108H6327XTSA1 (SOT-23 package). Cross-manufacturer equivalents should be evaluated based on matching VCEO, IC, and resistor values.
FAQ
What are the values of the internal bias resistors?
The internal bias resistors are R1 = 2.2 kΩ and R2 = 47 kΩ.
Is this component qualified for automotive applications?
Yes, the BCR108... series is qualified according to the AEC-Q101 standard.
What is the maximum collector-emitter voltage?
The maximum collector-emitter voltage (VCEO) is 50 V.
