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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V SOT323
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Bulk
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：2.2 kOhms
- Resistor - Emitter Base (R2)：47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- Frequency - Transition：170 MHz
- Power - Max：250 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Supplier Device Package：PG-SOT323
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Overview
The Infineon BCR108WH6433XTMA1 is an NPN silicon digital transistor housed in a SOT-323 package. It integrates internal bias resistors with typical values of R1 = 2.2 kΩ and R2 = 47 kΩ, yielding a resistor ratio of 0.047. The device supports a collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Electrical characteristics include a DC current gain (hFE) minimum of 70 at IC = 5 mA, a transition frequency (fT) of 170 MHz, and a total power dissipation of 250 mW. It operates within a junction temperature range up to 150 °C and meets AEC-Q101 qualification standards.
Feature Summary
- Integrates dual bias resistors for simplified circuit design
- Qualified for automotive applications per AEC-Q101 standard
- Optimized for switching, inverter, and interface circuits
Applications
- Switching circuits
- Inverter circuits
- Interface circuits
- Driver circuits
Procurement Notes
Verify the component against official Infineon documentation to confirm the specific suffix matches the required electrical parameters and packaging configuration. Ensure that the ordering information aligns with the manufacturer's current product lifecycle status and regional availability constraints before finalizing procurement plans.
Selection Notes
Select this component when a compact NPN digital transistor with integrated biasing is required for space-constrained designs. The SOT-323 package offers a small footprint suitable for surface-mount applications. Consider the 250 mW power dissipation limit and the 50 V voltage rating to ensure compatibility with the target circuit's operational requirements.
Part Context
This part belongs to the BCR108 series of NPN silicon digital transistors from Infineon Technologies. The 'W' designation indicates the SOT-323 package variant, while the suffix 'H6433XTMA1' specifies the tape-and-reel packaging format. This series provides pre-biased solutions to reduce external component count in logic and driver applications.
Replacement Considerations
Cross-reference with other BCR108 series variants such as BCR108S or BCR108 depending on the required package type (SOT363 or SOT23). Verify pinout compatibility and thermal resistance specifications when substituting components in existing layouts.
FAQ
What are the typical values for the internal bias resistors?
The typical internal bias resistor values are R1 = 2.2 kΩ and R2 = 47 kΩ.
Is this component qualified for automotive use?
Yes, the BCR108 series is qualified according to the AEC-Q101 standard.
What is the maximum collector-emitter voltage?
The maximum collector-emitter voltage (VCEO) is 50 V.
