SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BCR112E6327HTSA1 is an NPN pre-biased bipolar junction transistor manufactured by Infineon Technologies. It features a single configuration housed in a PG-SOT23 (SOT-23-3) surface-mount package. The device supports a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. Key electrical parameters include a transition frequency of 140 MHz, a minimum DC current gain (hFE) of 20 at 5 mA/5 V, and a maximum saturation voltage of 300 mV at specified base and collector currents. Maximum power dissipation is rated at 200 mW.
Verify the specific ordering suffix to confirm package type and tape/reel specifications. Confirm RoHS compliance status through official documentation before integration. Check for end-of-life notifications or discontinuation notices from the manufacturer to ensure long-term supply availability for production cycles.
Select this component when a compact NPN switch with integrated base resistors is required. Ensure the 50 V collector-emitter rating exceeds the maximum circuit voltage. Verify that the 100 mA collector current capability meets load requirements. Consider the 200 mW power dissipation limit relative to thermal management constraints in the final assembly.
This part belongs to the BCR series of pre-biased transistors from Infineon Technologies. These devices integrate internal biasing resistors to reduce external component count. The E6327HTSA1 suffix indicates specific packaging and automotive qualification standards within the broader product family.
Consult official cross-reference guides for verified substitutes. Ensure replacement parts match the SOT-23-3 package, 50 V rating, and NPN configuration. Verify equivalent hFE and saturation voltage characteristics for direct pin-to-pin compatibility.