BCR112WE6327BTSA1

BCR112WE6327BTSA1

  • Description:TRANS PREBIAS NPN 50V SOT323
  • Series:-

SKU:b592af46f2d7 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V SOT323
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):4.7 kOhms
  • Resistor - Emitter Base (R2):4.7 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:140 MHz
  • Power - Max:250 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:PG-SOT323

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BCR112WE6327BTSA1

Overview

The BCR112WE6327BTSA1 is a single NPN digital transistor from Infineon Technologies, housed in the PG-SOT323-3 surface-mount package. It integrates internal biasing resistors with a ratio of R1/R2 equal to 1, where both R1 and R2 are 4.7 kΩ. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Key electrical characteristics include a transition frequency (fT) of 140 MHz, a minimum DC current gain (hFE) of 20, and a maximum power dissipation (Ptot) of 250 mW. It operates within a temperature range of -55°C to +150°C.

Feature Summary

  • Integrates dual biasing resistors with a 1:1 ratio for simplified circuit design
  • Optimized for high-speed switching applications with a 140 MHz transition frequency
  • Designed for low saturation voltage operation to minimize power loss

Applications

  • General-purpose switching circuits
  • Driver stages for logic interfaces
  • Level shifting between different voltage domains

Procurement Notes

Verify the complete ordering part number against official Infineon documentation to ensure correct suffix alignment. Confirm RoHS compliance status and material content declarations via the manufacturer's data sheet before procurement. Check for end-of-life notifications or recommended replacement alternatives if availability is constrained.

Selection Notes

Select this component when a compact NPN digital transistor with matched internal resistors is required. Ensure the 50 V voltage rating and 100 mA current capacity meet the specific load requirements. Verify that the PG-SOT323-3 package dimensions fit the available PCB real estate and thermal management constraints.

Part Context

This part belongs to the BCR series of pre-biased transistors, which combine bipolar junction transistors with integrated resistor networks. These devices are designed to replace discrete transistor-resistor combinations, reducing board space and assembly complexity while maintaining consistent electrical performance across production batches.

Replacement Considerations

Consult official Infineon cross-reference guides for verified substitutes. Ensure any replacement maintains the same NPN polarity, SOT-323 package, and equivalent electrical parameters such as VCEO, IC, and fT.

BCR112WE6327BTSA1BCR112WE6327BTSA1

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