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The BCR112WE6327BTSA1 is a single NPN digital transistor from Infineon Technologies, housed in the PG-SOT323-3 surface-mount package. It integrates internal biasing resistors with a ratio of R1/R2 equal to 1, where both R1 and R2 are 4.7 kΩ. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Key electrical characteristics include a transition frequency (fT) of 140 MHz, a minimum DC current gain (hFE) of 20, and a maximum power dissipation (Ptot) of 250 mW. It operates within a temperature range of -55°C to +150°C.
Verify the complete ordering part number against official Infineon documentation to ensure correct suffix alignment. Confirm RoHS compliance status and material content declarations via the manufacturer's data sheet before procurement. Check for end-of-life notifications or recommended replacement alternatives if availability is constrained.
Select this component when a compact NPN digital transistor with matched internal resistors is required. Ensure the 50 V voltage rating and 100 mA current capacity meet the specific load requirements. Verify that the PG-SOT323-3 package dimensions fit the available PCB real estate and thermal management constraints.
This part belongs to the BCR series of pre-biased transistors, which combine bipolar junction transistors with integrated resistor networks. These devices are designed to replace discrete transistor-resistor combinations, reducing board space and assembly complexity while maintaining consistent electrical performance across production batches.
Consult official Infineon cross-reference guides for verified substitutes. Ensure any replacement maintains the same NPN polarity, SOT-323 package, and equivalent electrical parameters such as VCEO, IC, and fT.