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The BCR112WH6327XTSA1 is a digital NPN transistor manufactured by Infineon Technologies, housed in the PG-SOT323-3-1 surface-mount package. It integrates an NPN bipolar junction transistor with dual base resistors, each rated at 4.7 kΩ. The device features a maximum collector-emitter voltage (VCEO) of 50 V and a collector-base voltage (VCBO) of 50 V. Key electrical characteristics include a minimum DC current gain (hFE) of 20, a transition frequency (fT) of 140 MHz, and a maximum power dissipation (Pd) of 250 mW. It operates within a temperature range of -55 °C to +150 °C and meets AEC-Q100 qualification standards for automotive applications.
Verify the specific suffix H6327XTSA1 against the official Infineon datasheet to confirm packaging details and RoHS compliance status. Ensure the procurement channel provides valid traceability documentation required for automotive-grade components. Cross-reference the Mouser part number 726-bcr112wh6327xtsa for accurate ordering information.
Select this component when a compact NPN solution with integrated 4.7 kΩ base resistors is required. The SOT-323-3 package offers space efficiency for dense PCB layouts. Consider the 140 MHz transition frequency for high-speed switching needs and verify that the 250 mW power dissipation rating aligns with the thermal design of the target application.
This part belongs to Infineon's BCR series of digital transistors, which combine single or dual transistors with internal resistors. The BCR112 variant specifically utilizes an NPN configuration with two equal-value base resistors, distinguishing it from other series members that may feature different resistor ratios or complementary PNP structures.
Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with alternative digital transistors based on pinout, voltage ratings, and resistor values before substitution.