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The BCR116E6327HTSA1 is an NPN silicon digital transistor from Infineon Technologies, housed in a surface-mount PG-SOT23 (SOT-23-3) package. It features integrated base resistor R1 of 4.7 kOhms and emitter resistor R2 of 47 kOhms. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 V, a continuous collector current (Ic) of 100 mA, and a transition frequency (fT) of 150 MHz. The device has a maximum power dissipation of 200 mW, a DC current gain (hFE) of 70 at 5 mA/5 V, and a saturation voltage (Vce(sat)) of 300 mV at 500 µA base current and 10 mA collector current.
Verify the specific suffix E6327HTSA1 to confirm packaging type and tape-and-reel specifications. Confirm RoHS compliance status and REACH registration details prior to integration. Check for end-of-life notifications as some sources indicate potential obsolescence for this series variant.
Select this component when a single NPN digital transistor with 50 V rating and 100 mA current capacity is required. Ensure the integrated resistance values of 4.7 kOhm and 47 kOhm match the drive requirements. Consider the SOT-23-3 footprint constraints during PCB layout planning.
This part belongs to the BCR116 series of pre-biased NPN transistors. It shares the same functional architecture as other members like BCR116SH but differs in package configuration and specific resistance ratios. The HTSA1 suffix denotes the standard reel packaging format used for automated assembly processes.
Direct substitutes within the same family include BCR116XT variants with identical electrical characteristics but potentially different packaging suffixes. Cross-brand replacements require matching VCEO, Ic, and internal resistance values.