BCR116E6393HTSA1

BCR116E6393HTSA1

  • Description:TRANS PREBIAS NPN 50V SOT23
  • Series:-

SKU:699648815e38 Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V SOT23
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):4.7 kOhms
  • Resistor - Emitter Base (R2):47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:150 MHz
  • Power - Max:200 mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:PG-SOT23

Download product information

BCR116E6393HTSA1

Overview

The BCR116E6393HTSA1 is an NPN silicon digital transistor manufactured by Infineon Technologies. It integrates a single bipolar junction transistor with internal biasing resistors in a surface-mount PG-SOT23 package (SOT-23-3). The device features a collector-emitter breakdown voltage of 50 V and a continuous collector current rating of 100 mA. Internal resistor values are specified as R1 = 4.7 kΩ and R2 = 47 kΩ, yielding a ratio of approximately 0.1. Key electrical parameters include a minimum DC current gain (hFE) of 70 at 5 mA/5 V, a maximum saturation voltage of 300 mV at 10 mA/500 µA, and a transition frequency of 150 MHz. Power dissipation is rated at 200 mW.

Feature Summary

  • Integrates NPN transistor with base and emitter resistors for simplified circuit design
  • Optimized for high-speed switching applications with 150 MHz transition frequency
  • Low saturation voltage ensures efficient power handling in logic interfacing

Applications

  • Logic level shifting between microcontrollers and peripheral devices
  • Driver circuits for small-signal relays and LEDs
  • Pull-up/pull-down replacement in digital logic interfaces

Procurement Notes

Verify the specific suffix E6393 against official Infineon documentation to confirm exact resistor tolerances and tape-and-reel specifications. Confirm RoHS compliance status and AEC-Q100 qualification requirements if automotive application is intended. Check for end-of-life notices or recommended new designations via manufacturer channels before finalizing procurement plans.

Selection Notes

Select this component when a compact NPN digital transistor with 50 V rating and 100 mA capability is required. The fixed 4.7 kΩ/47 kΩ resistor network suits standard TTL/CMOS logic levels. Ensure thermal management supports 200 mW dissipation in the SOT-23 package under expected operating conditions.

Part Context

This part belongs to the BCR116 series of pre-biased transistors from Infineon. It shares the same core transistor structure and package type as variants like BCR116E6327HTSA1, differing primarily in manufacturing lot codes or minor parameter bins defined by the suffix. It serves as a discrete solution for replacing multiple external components in low-power digital switching tasks.

Replacement Considerations

BCR116E6327HTSA1 is a documented variant within the same BCR116 family sharing identical electrical characteristics and pinout. Verify that the specific suffix difference does not alter resistor tolerance or packaging configuration before substitution.

BCR116E6393HTSA1BCR116E6393HTSA1

Click on the inquiry