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The BCR116WE6327BTSA1 is an NPN silicon digital transistor from Infineon Technologies, belonging to the BCR116 series. It integrates a single NPN bipolar junction transistor with built-in bias resistors in a compact SOT-323 (PG-SOT323) surface-mount package. The device features a collector-emitter breakdown voltage of 50 V and a continuous collector current rating of 100 mA. Key electrical parameters include a minimum DC current gain (hFE) of 70 at specified test conditions, a transition frequency of 150 MHz, and a maximum power dissipation of 250 mW. The internal resistor network consists of R1 = 4.7 kΩ and R2 = 47 kΩ, providing a fixed ratio of 10. It is qualified for automotive applications under AEC-Q100 standards.
Verify the specific suffix E6327BTSA1 against official Infineon documentation to confirm package type and tape-and-reel specifications. Ensure compatibility with AEC-Q100 requirements if used in automotive systems. Check for end-of-life status or obsolescence notices prior to final design approval.
Select this component when a compact NPN digital transistor with a 10:1 resistor ratio is required. Compare hFE and Vce(sat) values against load requirements. Consider the SOT-323 footprint constraints and thermal dissipation limits relative to the application's power budget.
This part belongs to the BCR116 family of pre-biased transistors designed for high-density PCB layouts. The BCR116 series offers various resistor ratios and packages to suit different logic families and current driving needs within industrial and automotive sectors.
Consult official cross-reference guides for equivalent NPN digital transistors with similar 50V ratings and SOT-323 packaging. Verify pinout compatibility and electrical parameter margins before substitution.