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The BCR116WH6327XTSA1 is an NPN digital transistor from Infineon Technologies, designed for high-frequency switching applications. It integrates a single bipolar junction transistor with built-in bias resistors in a compact SOT-323 package. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. The device features a minimum DC current gain (hFE) of 70 at 5 mA and 5 V, with a transition frequency (fT) of 150 MHz. Internal resistor values are specified as R1 = 4.7 kΩ and R2 = 47 kΩ, providing a fixed ratio of approximately 10:1. Maximum power dissipation is rated at 250 mW.
Verify component authenticity through authorized distribution channels to ensure compliance with automotive quality standards. Confirm that the ordering suffix corresponds to the specific reel packaging configuration required for automated assembly processes. Cross-reference the full part number against official manufacturer databases to validate production status and availability constraints prior to procurement planning.
Select this component when a pre-biased NPN solution is required for 50 V applications with moderate current demands. The integrated 4.7 kΩ base resistor and 47 kΩ emitter resistor provide a fixed gain structure suitable for standard logic interfacing. Ensure the thermal management strategy accommodates the 250 mW power dissipation limit within the SOT-323 footprint constraints.
This part belongs to the BCR116 series of digital transistors, which are engineered for automotive and industrial environments. The series offers various configurations with different internal resistor ratios and voltage ratings. The WH6327XTSA1 suffix denotes the specific SOT-323 tape-and-reel packaging variant compliant with RoHS directives and AEC-Q101 standards for automotive grade components.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with alternative digital transistors by matching VCEO, IC, hFE, and internal resistor ratios.