BCR119E6327HTSA1

BCR119E6327HTSA1

$0.03
  • Description:TRANS PREBIAS NPN 50V SOT23
  • Series:-

SKU:9f5db4cb03c0 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V SOT23
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Bulk
  • Resistors Included:R1 Only
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):4.7 kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:150 MHz
  • Power - Max:200 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:PG-SOT23

Download product information

BCR119E6327HTSA1

Overview

The BCR119E6327HTSA1 is an NPN silicon digital transistor featuring a built-in base resistor (R1=4.7 kΩ). It provides a collector-emitter voltage (VCEO) of 50 V and a DC collector current (IE) of 100 mA. The device operates with a total power dissipation of 200 mW at a case temperature up to 102°C, reaching a maximum junction temperature of 150°C. Electrical characteristics include a DC current gain (hFE) ranging from 120 to 630 at IC=5 mA, and a transition frequency (fT) of 150 MHz at IC=10 mA. The component is housed in a SOT-23 surface-mount package.

Feature Summary

  • Integrated base resistor simplifies circuit design by eliminating external biasing components
  • High DC current gain ensures efficient switching performance across varying load conditions
  • Automotive qualification supports deployment in demanding electronic environments

Applications

  • Switching circuits
  • Inverter applications
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm the exact package type and marking code. Confirm RoHS compliance status and AEC-Q101 automotive qualification requirements for your specific application environment before finalizing procurement specifications.

Selection Notes

Select this component when a compact NPN digital switch with a 4.7 kΩ internal base resistor is required. Ensure the operating voltage does not exceed 50 V and the continuous current remains within 100 mA limits. Consider thermal derating curves if the ambient case temperature exceeds 102°C to maintain safe power dissipation levels.

Part Context

This part belongs to the BCR119 series of NPN silicon digital transistors manufactured by Infineon Technologies. The series includes variants such as BCR119F, BCR119S, and BCR119W, which utilize different packages like TSFP-3, SOT363, and SOT323 respectively, while maintaining similar electrical functionalities.

Replacement Considerations

Consult official Infineon cross-reference lists for verified substitutes. Direct replacements must match the 50 V rating, 100 mA current capacity, and 4.7 kΩ internal resistance configuration.

FAQ

What is the typical value of the internal base resistor?

The typical value of the built-in input resistor R1 is 4.7 kΩ.

Is this component qualified for automotive applications?

Yes, the BCR119 series is qualified according to the AEC-Q101 standard.

What is the maximum junction temperature?

The maximum junction temperature (Tj) is 150 °C.

BCR119E6327HTSA1BCR119E6327HTSA1
$0.03
Buy Now