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The BCR119E6327HTSA1 is an NPN silicon digital transistor featuring a built-in base resistor (R1=4.7 kΩ). It provides a collector-emitter voltage (VCEO) of 50 V and a DC collector current (IE) of 100 mA. The device operates with a total power dissipation of 200 mW at a case temperature up to 102°C, reaching a maximum junction temperature of 150°C. Electrical characteristics include a DC current gain (hFE) ranging from 120 to 630 at IC=5 mA, and a transition frequency (fT) of 150 MHz at IC=10 mA. The component is housed in a SOT-23 surface-mount package.
Verify the specific ordering suffix against official Infineon documentation to confirm the exact package type and marking code. Confirm RoHS compliance status and AEC-Q101 automotive qualification requirements for your specific application environment before finalizing procurement specifications.
Select this component when a compact NPN digital switch with a 4.7 kΩ internal base resistor is required. Ensure the operating voltage does not exceed 50 V and the continuous current remains within 100 mA limits. Consider thermal derating curves if the ambient case temperature exceeds 102°C to maintain safe power dissipation levels.
This part belongs to the BCR119 series of NPN silicon digital transistors manufactured by Infineon Technologies. The series includes variants such as BCR119F, BCR119S, and BCR119W, which utilize different packages like TSFP-3, SOT363, and SOT323 respectively, while maintaining similar electrical functionalities.
Consult official Infineon cross-reference lists for verified substitutes. Direct replacements must match the 50 V rating, 100 mA current capacity, and 4.7 kΩ internal resistance configuration.
The typical value of the built-in input resistor R1 is 4.7 kΩ.
Yes, the BCR119 series is qualified according to the AEC-Q101 standard.
The maximum junction temperature (Tj) is 150 °C.