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Product Detailed Parameters
- Description：TRANS PREBIAS
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- Resistors Included：-
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Resistor - Base (R1)：-
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- Frequency - Transition：-
- Power - Max：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
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Overview
The BCR119WE6327 is an NPN silicon digital transistor from the Infineon BCR119 series, housed in a SOT-323 surface-mount package. It integrates a single transistor with a built-in input resistor of 4.7 kΩ (typical). Key electrical ratings include a collector-emitter voltage (VCEO) of 50 V, a continuous DC collector current of 100 mA, and a total power dissipation of 250 mW at case temperatures up to 128°C. The device features a minimum DC current gain (hFE) of 120 and a transition frequency (fT) of 150 MHz. It operates within a junction temperature range of -65°C to 150°C.
Feature Summary
- Integrates a single NPN bipolar transistor with a built-in bias resistor for simplified circuit design.
- Provides high switching speed with a transition frequency of 150 MHz.
- Features low collector-emitter saturation voltage for efficient signal switching.
- Qualified according to AEC-Q101 standards for automotive reliability.
Applications
- Switching circuits
- Inverter applications
- Interface circuits
- Driver circuits
Procurement Notes
Verify the specific suffix 'E6327' against official Infineon documentation to confirm the exact tape-and-reel packaging configuration and marking code. Ensure that the component meets RoHS compliance requirements if restricted substances are prohibited in the target assembly process. Cross-reference the datasheet revision date to ensure all thermal resistance parameters align with the manufacturing batch.
Selection Notes
Select this component when a compact NPN digital switch with a 4.7 kΩ base resistor is required. The SOT-323 package is suitable for space-constrained designs. Consider the 250 mW power dissipation limit relative to the ambient operating temperature. Verify that the 50 V breakdown voltage is sufficient for the intended load conditions.
Part Context
This part belongs to the BCR119 family of pre-biased digital transistors. Other variants in the series include the BCR119S (dual transistor in SOT-363), BCR119F (single transistor in TSFP-3), and BCR119 (single transistor in SOT-23). All share similar electrical characteristics but differ in pin configurations and physical packages.
Replacement Considerations
Direct replacements within the same family include BCR119WE6327HTSA1. For different packages, consider BCR119S or BCR119F depending on board layout constraints. Ensure any substitute maintains the 4.7 kΩ internal resistor value and compatible SOT-323 footprint.
FAQ
What is the typical value of the built-in input resistor?
The typical value of the built-in input resistor (R1) is 4.7 kΩ, with a range from 3.2 kΩ to 6.2 kΩ.
What is the maximum total power dissipation for the BCR119W?
The maximum total power dissipation for the BCR119W is 250 mW, provided the case temperature (TS) does not exceed 128°C.
Is this component qualified for automotive applications?
Yes, the BCR119 series is qualified according to the AEC-Q101 standard.
