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The BCR119WE6327HTSA1 is an NPN silicon digital transistor from Infineon Technologies, housed in a SOT-323 surface-mount package. It integrates a single transistor with a built-in input resistor (R1) of 4.7 kΩ. Key electrical ratings include a collector-emitter voltage (VCEO) of 50 V, a DC collector current (IE) of 100 mA, and a total power dissipation (Ptot) of 250 mW at case temperatures up to 124°C. The device features a transition frequency (fT) of 150 MHz and a DC current gain (hFE) ranging from 120 to 630. It operates within a junction temperature range of -65°C to +150°C.
Verify the component authenticity by checking the marking code 'WKs' on the SOT-323 package against official Infineon documentation. Confirm that the ordering suffix 'E6327HTSA1' corresponds to the specified tape-and-reel packaging format. Ensure the procurement channel provides valid traceability data consistent with automotive-grade AEC-Q101 qualification requirements.
Select this component when a compact NPN digital switch with a 4.7 kΩ base resistor is required. The SOT-323 package suits space-constrained designs needing 50 V blocking capability. Consider the hFE range of 120 to 630 for gain variations in logic interface applications. Verify thermal constraints, as the maximum power dissipation is limited to 250 mW depending on the case temperature.
This part belongs to the BCR119 series of NPN silicon digital transistors. Other variants in the series include BCR119 (SOT-23), BCR119F (TSFP-3), and BCR119S (SOT-363 dual transistor). All share similar electrical characteristics but differ in physical package dimensions and pin configurations. The W suffix specifically denotes the SOT-323 form factor used in this component.
Direct substitutes within the same family include BCR119E6327HTSA1 (SOT-23) and BCR119FE6327HTSA1 (TSFP-3), provided the PCB footprint allows for package changes. Cross-manufacturer replacements require matching VCEO, IE, R1 value, and package type.