BCR119WH6327XTSA1

BCR119WH6327XTSA1

  • Description:TRANS PREBIAS NPN 50V SOT323
  • Series:-

SKU:c89e6f348eac Category: Brand:

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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V SOT323
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Resistors Included:R1 Only
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):4.7 kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:150 MHz
  • Power - Max:250 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:PG-SOT323

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BCR119WH6327XTSA1

Overview

The BCR119WH6327XTSA1 is an NPN silicon digital transistor from the Infineon BCR119 series, housed in a SOT-323 surface-mount package. It integrates a single transistor with a built-in base resistor (R1=4.7 kΩ). Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, a DC collector current (IC) of 100 mA, and a total power dissipation (Ptot) of 250 mW at a case temperature up to 124°C. The device features a minimum DC current gain (hFE) of 120, a transition frequency (fT) of 150 MHz, and operates within a junction temperature range of -65°C to 150°C.

Feature Summary

  • Integrates an NPN transistor with a built-in 4.7 kΩ base resistor for simplified circuit design
  • Optimized for switching applications including inverters, interface circuits, and driver circuits
  • Compliant with AEC-Q101 automotive qualification standards

Applications

  • Switching circuits
  • Inverter circuits
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify the specific suffix 'H6327XTSA1' against official Infineon documentation to confirm packaging details and RoHS compliance status. Ensure that the SOT-323 package orientation matches the target PCB footprint requirements. Cross-reference the component marking code 'WKs' with the datasheet pin configuration table to prevent assembly errors during production.

Selection Notes

Select this component when a compact NPN digital switch with integrated biasing is required. The 4.7 kΩ internal resistor simplifies drive circuitry compared to discrete transistors. Consider the 50 V breakdown voltage and 100 mA current limits to ensure adequate headroom for the intended load. Verify thermal constraints relative to the 250 mW power dissipation rating under expected operating conditions.

Part Context

This part belongs to the BCR119 series of NPN silicon digital transistors. The 'W' designation indicates the SOT-323 package variant. Other series members include BCR119F (TSFP-3), BCR119S (SOT-363 dual transistor), and standard BCR119 (SOT-23). All variants share similar electrical characteristics but differ in physical package and pinout configurations.

Replacement Considerations

Direct substitutes within the same family include BCR119FH6327XTSA1 and BCR119SH6327XTSA1, provided the package change is acceptable. Generic replacements must match the 50 V VCEO, 100 mA IC, and ~4.7 kΩ internal resistance specifications.

FAQ

What is the value of the built-in base resistor?

The built-in base resistor (R1) has a typical value of 4.7 kΩ, with a range from 3.2 kΩ to 6.2 kΩ.

What is the maximum collector-emitter voltage?

The maximum collector-emitter voltage (VCEO) is rated at 50 V.

Is this component qualified for automotive applications?

Yes, the BCR119 series is qualified according to the AEC-Q101 standard.

BCR119WH6327XTSA1BCR119WH6327XTSA1

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