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The BCR129WE6327HTSA1 is an NPN silicon digital transistor from Infineon Technologies, housed in a SOT-323 surface-mount package. It integrates a single transistor with a built-in bias resistor (R1) of 10 kΩ nominal value. The device supports a collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. Key electrical characteristics include a DC current gain (hFE) ranging from 120 to 630 at IC = 5 mA, and a transition frequency (fT) of 150 MHz. Total power dissipation is rated at 250 mW for the W variant, with a maximum junction temperature of 150 °C.
Verify component authenticity by checking the marking code on the SOT-323 package against official Infineon documentation. Confirm the specific suffix matches the requested variant. Ensure storage conditions adhere to moisture sensitivity levels defined in the datasheet prior to reflow soldering processes.
Select this component when a compact NPN solution with integrated biasing is required for low-power switching tasks. The SOT-323 package offers space efficiency compared to larger footprints. Consider the thermal resistance limits and ensure the operating ambient temperature remains within the specified range to maintain the 250 mW power dissipation rating.
This part belongs to the BCR129 series of NPN digital transistors. The 'W' designation indicates the SOT-323 package configuration, distinguishing it from the SOT-23 (standard) and SOT-363 (dual transistor) variants within the same family. All variants share similar electrical performance profiles but differ in pinout and physical dimensions.
Direct replacements must match the NPN polarity, 50 V VCEO rating, 100 mA IC limit, and ~10 kΩ internal resistor. Verify that alternative packages provide equivalent thermal resistance and pin compatibility if footprint constraints are strict.
The internal bias resistor (R1) has a nominal value of 10 kΩ, with a typical range between 7 kΩ and 13 kΩ.
Yes, the BCR129 series is qualified according to the AEC-Q101 standard for stress test qualification of integrated circuits.
For the BCR129W (SOT-323), the maximum total power dissipation is 250 mW when the case temperature is maintained at or below 124°C.