BCR129WE6327HTSA1

BCR129WE6327HTSA1

  • Description:TRANS PREBIAS NPN 50V SOT323
  • Series:-

SKU:18c61d24bb56 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V SOT323
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Resistors Included:R1 Only
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):10 kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:150 MHz
  • Power - Max:250 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:PG-SOT323

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BCR129WE6327HTSA1

Overview

The BCR129WE6327HTSA1 is an NPN silicon digital transistor from Infineon Technologies, housed in a SOT-323 surface-mount package. It integrates a single transistor with a built-in bias resistor (R1) of 10 kΩ nominal value. The device supports a collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. Key electrical characteristics include a DC current gain (hFE) ranging from 120 to 630 at IC = 5 mA, and a transition frequency (fT) of 150 MHz. Total power dissipation is rated at 250 mW for the W variant, with a maximum junction temperature of 150 °C.

Feature Summary

  • Integrates an NPN transistor with a fixed internal base bias resistor to simplify circuit design.
  • Optimized for switching applications including inverters, interface circuits, and driver stages.
  • Complies with AEC-Q101 automotive qualification standards for reliability.

Applications

  • Switching circuits
  • Inverter logic gates
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify component authenticity by checking the marking code on the SOT-323 package against official Infineon documentation. Confirm the specific suffix matches the requested variant. Ensure storage conditions adhere to moisture sensitivity levels defined in the datasheet prior to reflow soldering processes.

Selection Notes

Select this component when a compact NPN solution with integrated biasing is required for low-power switching tasks. The SOT-323 package offers space efficiency compared to larger footprints. Consider the thermal resistance limits and ensure the operating ambient temperature remains within the specified range to maintain the 250 mW power dissipation rating.

Part Context

This part belongs to the BCR129 series of NPN digital transistors. The 'W' designation indicates the SOT-323 package configuration, distinguishing it from the SOT-23 (standard) and SOT-363 (dual transistor) variants within the same family. All variants share similar electrical performance profiles but differ in pinout and physical dimensions.

Replacement Considerations

Direct replacements must match the NPN polarity, 50 V VCEO rating, 100 mA IC limit, and ~10 kΩ internal resistor. Verify that alternative packages provide equivalent thermal resistance and pin compatibility if footprint constraints are strict.

FAQ

What is the nominal value of the internal bias resistor?

The internal bias resistor (R1) has a nominal value of 10 kΩ, with a typical range between 7 kΩ and 13 kΩ.

Is this component qualified for automotive applications?

Yes, the BCR129 series is qualified according to the AEC-Q101 standard for stress test qualification of integrated circuits.

What is the maximum total power dissipation for the SOT-323 variant?

For the BCR129W (SOT-323), the maximum total power dissipation is 250 mW when the case temperature is maintained at or below 124°C.

BCR129WE6327HTSA1BCR129WE6327HTSA1

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