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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V SOT23
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：10 kOhms
- Resistor - Emitter Base (R2)：10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- Frequency - Transition：130 MHz
- Power - Max：200 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：PG-SOT23
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Overview
The BCR133E6327HTSA1 is an NPN silicon digital transistor housed in a SOT-23 surface-mount package. It integrates a single transistor with two internal bias resistors, R1 and R2, both nominally 10 kΩ. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. Total power dissipation is rated at 200 mW. Key electrical characteristics include a DC current gain (hFE) minimum of 30, a transition frequency (fT) typical value of 130 MHz, and a collector-base cutoff current (ICBO) maximum of 100 nA.
Feature Summary
- Integrates an NPN bipolar junction transistor with dual built-in bias resistors to reduce external component count.
- Features high-speed switching capability supported by a typical transition frequency of 130 MHz.
- Complies with AEC-Q101 qualification standards for automotive electronic components.
Applications
- Switching circuits
- Inverter applications
- Interface circuitry
- Drive circuits
Procurement Notes
Verify the specific ordering suffix E6327HTSA1 against official Infineon documentation to confirm the exact tape-and-reel packaging configuration and marking codes. Confirm RoHS compliance status and lead-free material declarations directly from the manufacturer's latest datasheet revision before finalizing procurement specifications.
Selection Notes
Select this component when a compact NPN switching solution with integrated base drive resistors is required. Ensure the design operates within the 50 V collector-emitter voltage limit and 100 mA current rating. Verify that the 200 mW total power dissipation rating accommodates the thermal environment of the target application.
Part Context
This part belongs to the BCR133 series of NPN silicon digital transistors manufactured by Infineon Technologies. The series includes variants such as BCR133S and BCR133W, which utilize different packages like SOT-363 and SOT-323 respectively. All variants share similar electrical characteristics but differ in physical footprint and pin configurations.
Replacement Considerations
Consult official Infineon cross-reference lists for verified substitutes. Generic equivalents may not match the specific internal resistor ratios or AEC-Q101 automotive qualification requirements.
FAQ
What are the values of the internal bias resistors?
The BCR133E6327HTSA1 contains two internal bias resistors, R1 and R2, both with a nominal resistance of 10 kΩ.
Is this component qualified for automotive applications?
Yes, the BCR133 series is qualified according to the AEC-Q101 standard.
What is the maximum collector-emitter voltage?
The maximum collector-emitter voltage (VCEO) is 50 V.
