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The BCR133E6393HTSA1 is an NPN silicon digital transistor from the Infineon BCR133 series, housed in a SOT-23 surface-mount package. It integrates two internal bias resistors with a nominal value of 10 kΩ each and a ratio of 1:1. Key electrical specifications include a collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 100 mA, and a total power dissipation (Ptot) of 200 mW at case temperatures up to 102°C. The device features a transition frequency (fT) of 130 MHz and a minimum DC current gain (hFE) of 30.
Verify the specific suffix E6393 against official documentation to confirm packaging details and reel orientation. Confirm RoHS compliance status and check for any end-of-life notices or obsolescence warnings before finalizing procurement plans.
Select this component when a single NPN digital transistor with integrated 10 kΩ bias resistors is required. Ensure the 50 V collector-emitter voltage rating meets the system's maximum operating voltage requirements and that the SOT-23 package fits the available PCB footprint constraints.
This part belongs to the BCR133 series of NPN silicon digital transistors manufactured by Infineon Technologies. The series includes variants such as BCR133S and BCR133W, which offer different pin configurations and package types like SOT363 and SOT323 while maintaining similar electrical characteristics.
Check for direct replacements within the BCR133 series, such as BCR133E6327HTSA1, ensuring identical resistor values and package dimensions. Verify compatibility with existing PCB footprints and thermal management requirements before substitution.
The BCR133E6393HTSA1 contains two internal bias resistors, R1 and R2, both nominally valued at 10 kΩ.
Yes, the BCR133 series is qualified according to the AEC Q101 standard, making it suitable for automotive electronics.
The maximum continuous collector current (IC) for this device is specified as 100 mA.