BCR133E6433HTMA1

Overview

The BCR133E6433HTMA1 is an NPN silicon digital transistor from Infineon Technologies, housed in a SOT-23 package. It integrates bias resistors R1 and R2, both nominally 10 kΩ with a ratio of 1. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 100 mA, and a total power dissipation (Ptot) of 200 mW at case temperatures up to 102°C. The device features a minimum DC current gain (hFE) of 30 and a transition frequency (fT) of 130 MHz. Operating junction temperature ranges from -65°C to +150°C.

Feature Summary

• Integrates dual bias resistors for simplified circuit design
• Qualified for automotive applications per AEC-Q101 standards
• Optimized for switching, inverter, interface, and drive circuits

Applications

• Switching circuits
• Inverter circuits
• Interface circuits
• Drive circuits

Procurement Notes

Verify the specific ordering suffix E6433HTMA1 against official documentation to confirm the exact tape-and-reel packaging configuration and marking code. Confirm RoHS compliance status directly with the manufacturer or authorized distributors before finalizing procurement plans.

Selection Notes

Select this component when a single NPN digital transistor with a 10 kΩ input resistor is required. Ensure the application operates within the 50 V collector-emitter voltage limit and 100 mA current rating. Verify thermal management requirements against the 200 mW power dissipation specification at the expected operating temperature.

Part Context

This part belongs to the BCR133 series of NPN silicon digital transistors. The series includes variants such as BCR133S (dual isolated transistors in SOT-363) and BCR133W (single transistor in SOT-323). All share similar electrical characteristics but differ in package type and internal configuration.

Replacement Considerations

Check for direct equivalents within the BCR133 series, such as BCR133S or BCR133W, if package changes are acceptable. Verify pinout compatibility and electrical parameter overlap before substituting with other manufacturers' NPN digital transistors.